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| AOD480 N-Channel Enhancement Mode Field Effect Transistor General Description VGS=10V, ID=18A The AOD480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD480 is Pb-free (meets ROHS & Sony 259 specifications). AOD480L is a Green Product ordering option. AOD480 and AOD480L are electrically identical. TO-252 D-PAK Features 1.4 VDS (V) = 30V ID = 25A (VGS = 10V) RDS(ON) <23 m (VGS = 10V) RDS(ON) <36 m (VGS = 4.5V) 193 UIS Tested! 18 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Maximum 30 20 25 21 45 13 25 33 17 2.5 1.6 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.3mH Power Dissipation Power Dissipation B TC=100C TA=25C TA=70C A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient B Maximum Junction-to-Case Symbol t 10s Steady-State Steady-State RJA RJC Typ 16.7 40 3.6 Max 25 50 4.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD480 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=8A Forward Transconductance VDS=5V, ID=8A 10 IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, V DS=5V VGS=10V, ID=20A TJ=125C 1 30 19 24 29 24 0.77 1 4.3 621 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 118 85 0.8 11.3 VGS=10V, V DS=15V, ID=20A 5.7 2.1 3 4.5 VGS=10V, V DS=15V, R L=0.75, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s 3.1 15.1 2.7 15.5 7.1 6.5 5 23 5 21 10 1.5 14 7 820 23 30 36 1.6 Min 30 0.004 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T=25C. The SOA A curve provides a single pulse rating. I. Revision 0: May 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 25 4.5V 20 ID (A) 15 10 3.5V 5 VGS=3V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 35 Normalized On-Resistance VGS=4.5V 30 RDS(ON) (m) 1.6 VGS=10V ID=20A 0 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 4 6V 4V ID(A) 5V 20 VDS=5V 16 12 8 125C 25C 1.4 1.2 25 VGS=4.5V ID=8A 1 20 VGS=10V 0.8 15 0 5 10 15 20 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 ID=20A 50 RDS(ON) (m) 1.0E+01 1.0E+00 1.0E-01 125C IS (A) 40 125C 1.0E-02 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 30 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 20 1.0E-04 25C FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 3 6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics 1000 TJ(Max)=175C, T C=25C 100 ID (Amps) RDS(ON) limited DC Power (W) 10s 100s 1ms 1000 800 Capacitance (pF) 600 VDS=15V ID=20A Ciss 400 Coss 200 0 0 Crss 1.4 494 692 593 830 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 193 18 200 160 120 80 40 0 0.0001 TJ(Max)=175C TC=25C 10 1 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100 0.001 0.01 59 0.1 1 10 Pulse 142 (s) Width Figure 10: Single Pulse Power Rating Junction-to30 Case (Note F) 10 ZJC Normalized Transient Thermal Resistance D=T on/T TJ,PK=T C+PDM.ZJC.RJC RJC=4.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD488 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 35 ID(A), Peak Avalanche Current Power Dissipation (W) 30 25 20 15 10 0.000001 TA=25C 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) 1.4 494 692 593 830 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 193 18 30 50 40 TA=25C Current rating ID(A) Power (W) 20 30 20 10 0 0.01 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 0.1 1 59 142 10 100 1000 Pulse Width (s) 30 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=50C/W 0.01 Single Pulse 0.001 0.00001 PD Ton T 100 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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